Electrical Properties of the 3C-SiC/SiO2 Interface Grown With High Temperature Oxidation

Abstract

3C-Silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors are fabricated to study the 3C-SiC/SiO2 interface using standard hi-low capacitance-voltage (C-V) and conductance-voltage (G-V) methods. Devices are fabricated on an n-type 3C-SiC epilayer grown on a (100) oriented silicon (Si) substrate. Dry oxidation is done at different temperatures (1200oC - 1400oC) to grow the oxide layer. The 1300oC as-oxidized device gives the lowest Dit of 5.8x1011eV-1cm-2 at 0.25eV away from the conduction band (CB) edge. SIMS and AFM analyses of the devices have shown that there is no detrimental effect of high temperature oxidation on the oxide stoichiometry and surface roughness.

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