IJFPS · Final journal article

The Phenomenon of Colossal Magnetoresistance and Some Experimental Results

Author(s): Haji Shirinzadeh
Journal: International Journal of Fundamental Physical Sciences Year: 2014 Volume: 4 Issue: 1 Pages: 13-25 ISSN: 2231-8186

Abstract

The Present  material is anti ferromagnetic and insulting while replacing  with alkaline earth atoms changes take place in symmetry and crystal structure. Ferromagnetic interaction for example increase with do pant concentration  and attains maximum at, beyond this level different type of antiferromagnetic interaction intra as well as inter-layer emerge which grown the overall magnetic behavior of the compound. We discuss semi covalent exchange interactions of four types. The nature of exchange viewed with the degree of overlap of the empty   level and the field  level. Then most interesting case is where exchange between  and  take place through hopping of holes levels from  to  via. At each site the mobile hole spin is parallel to the localized case spin at  and, thus, ferromagnetism is developed along  bonds. This double exchange is strong enough to suppress other exchange interactions. In this paper we are discuss the fundamental aspects of the double-exchange interaction, the impact of other important features like john-Teller effect, modulation of  bond length and angle through A-site substitution ,charge carrier transport dependence on A-site radius, orbital ordering among the   -  network etc. the colossal magneto resistance (CMR) phenomena arises due to several cause. The paper reviews various observed aspects related to CMR to contribute to latest understanding of its physics. Some experimental results are given to illustrate some aspects.‎

Keywords

Thin filmsCMRMagneto Resistance
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